Silicon Carbide Power MOSFET
Model: C3M0065090D
Category: MOSFETs
C3M™ SiC MOSFET technology. High blocking voltage with low On-resistance.
Specifications
| Parameter | Value |
|---|---|
| Vds (Drain-Source Voltage) | 900 |
| Id (Continuous Drain Current) | 36 |
| Rds(on) (Max) | 65 mOhm |
| Vgs(th) | 2.1V |